Innoscience Launches All GaN Fast Charging Solution
As power density of fast charging adapters needs to be upgraded in the market continuously, the switching frequency of adapters is gradually increased to reduce volume of components in it. Traditional Si MOS components, switching loss and driving loss have significantly reduced conversion efficiency of adapters. Restrictions of components can’t increase operating frequency, which limits the reduction of magnetic components, making power density of adapters not be increased further. Innoscience has launched many GaN fast charging solutions. Conversion efficiency and power density of fast charging adapters are increased by replacing primary Si MOS with InnoGaN components. Innoscience InnoGaN products have been used in hundreds of products from dozens of well-known brands and manufacturers, such as Nubia, Meizu, Lapo, MOMAX, ROCK, and Fei Pin. The shipment of high-voltage GaN has exceeded 3 million, and the market feedback is good.
Innoscience InnoGaN is used in APFC and LLC topology
When the primary Si MOS components are replaced by InnoGaN components, the volume of adapters is greatly reduced, but is there any way to increase switching frequency? When traditional Si MOS is in a dozens of KHz, the efficiency can be increased obviously by replacing Schottky with synchronous rectification. However, when the frequency is increased to several hundred KHz, the driving loss of Si MOS is large, which not only increases the drive difficulty, but also increases heat and reduces conversion efficiency of adapters.
Thanks to low Qg, low conductance and easy driving of GaN components, Innoscience introduces a GaN synchronous rectifier used in the secondary synchronous rectification. By replacing the secondary traditional Si MOS synchronous rectifiers with InnoGaN components, the drive loss of synchronous rectification on the low-voltage side can be reduced, and the switching frequency can be increased to above 500KHz, also, the heat of the synchronous rectification driver can be reduced effectively. Therefore the volume of adapters can be reduced greatly, and power density can be increased.
Innoscience has launched a combination of low-voltage side GaN synchronous rectifier and primary-side InnoGaN. It forms a set of the primary All GaN solution for adapters. Based on the primary InnoGaN switch tube, InnoGaN is also used in the secondary synchronous rectification. When they are combined, they can reduce the drive loss and the heat of drive IC under high-frequency switch, thereby efficiency can be increased, and the volume of the adapter can be reduced.
Innoscince has launched low-voltage GaN synchronous rectifiers. Its wafer-level packaging volume is greatly reduced compared to traditional DFN5*6 packaged MOS transistors. At the same time, its optimized wires are more convenient for high-frequency and high-current wiring. It not only can be used in the secondary synchronous rectification applications, but also can be used in high-power PD car chargers and power banks. If H-bridge boost circuits and duck circuits or rectifier boost circuits or buck circuits are synchronized, drive loss can be reduced, operating frequency and power density can be increased. It is an ideal substitute of traditional Si MOS in high- frequency applications.
Innoscience Technology Co., Ltd. was established in December 2015. It is a national high-tech enterprise that is dedicated to developing and producing 8-inch silicon-based gallium nitride power components and radio frequency components. Innoscience is one of the largest gallium nitride power component IDM companies in the world. There are teams with much experience in the field of gallium nitride in it. Advanced 8-inch machine equipments and systematic development and quality control analysis ability make Innoscience gallium nitride products have the first-class quality and performance, and competitive in the market.
Since establishing the first mass production line of 8-inch enhanced silicon-based gallium nitride power component in 2017, Innoscience has released and sold a variety of gallium nitride power components below 650V. The performance indicators of the products have been internationally advanced. They can be widely used in many emerging fields, such as fast charging, 5G communication, artificial intelligence, autonomous driving, data center, etc.