Dongke Releases the First Domestic Built-in GaN Power Management Chip: Reduce the Peripheral by 40%
On August 21, 2020, the “2020 (Autumn) USB PD&Type-C Asia Exhibition” hosted by Charity Head Network was successfully held in Shenzhen. At the seminar of this exhibition, Mr. Zhao Shaofeng, director and sales director of Dongke Semiconductor Semiconductor, brought a keynote speech on “The Ingenuity of Dongke Semiconductor-Advantages of High Power Density Encapsulated Chips”, and released the first domestic integrated The DKG045Q series of GaN-encapsulated power management chips has become a milestone in the development of GaN technology in the field of fast charging sources. As a result, Dongke became the first domestic manufacturer to master the sealing technology of gallium nitride power devices and power management chips.
According to Mr. Zhao Shaofeng, Dongke DKG045Q series adopts QFN 5mm*6mm package, which integrates 650V/200mΩ E-mode GaN HEMT, logic controller, GaN driver, high voltage start tube, etc., adopts frequency conversion QR control method, and the maximum output power is 45W, the maximum switching frequency is 200kHz.
Dongke DKG045Q series adopts a highly integrated design, which helps improve the overall power density of fast charging products. In addition to the built-in GaN device, the chip also integrates a self-powered circuit, no third winding, no Vcc voltage regulator circuit, Brown in/Brown out protection, full voltage constant power compensation and various protection functions.
Thanks to the adoption of the Dongke sealed GaN power management chip DKG045Q and the highly integrated synchronous rectifier chip DK5V100R10M, the overall layout of the Dongke 45W GaN fast charge DEMO is very streamlined. It is reported that Dongke completed the development of this reference design with only 64 components, and the degree of product streamlining subverts the tradition. In terms of power density, the overall size of the reference design is about 43.1mm×36.1mm×19.6mm. With the casing, its power density can still reach 1.12W/cm³, which is ahead of most gallium nitride fast charging products currently on the market.
Dongke adopts the packaged controller + driver + GaN HEMT solution to reduce the parasitic parameters of the fast charging solution at high frequencies, thereby reducing the difficulty of debugging the fast charging source, and achieving the streamlining of peripheral components and increasing power density. purpose.
In terms of cost, thanks to the highly integrated chip design, the GaN fast charging solution developed based on Dongke’s power chip has reduced the number of peripheral devices by more than 40%, and the production cost has been greatly reduced. The popularity of it played a positive role.
Dongke original factory contact information: 13926029398 (Mr. Zhao)