Transphorm Releases Gallium Nitride Chip TP65H300G4LSG, SuperGaN Power FET
In 2020, the gallium nitride fast charging market ushered in explosive growth. On the one hand, the major gallium nitride chip manufacturers realized mass production and shipment one after another; on the other hand, mainstream mobile phone brands and e-commerce brands entered the market one after another, which accelerated the listing of terminal accessories products.
Recently, the charging head network once again learned from the supply chain that American Transphorm Company has launched a gallium nitride power chip TP65H300G4LSG, called SuperGaN, which is based on the 4th generation GaN platform of Transphorm, and adopts advanced epi and patented design technology to reduce the cost by simplifying the manufacturing process, while improving the silicon efficiency by reducing the gate charge, output capacitance, cross loss and reverse recovery charge.
TP65H300G4LSG adopts the most advanced high-voltage GaN-HEMT and low-voltage silicon MOSFET technology of Transphorm company, providing excellent reliability and performance. The product has withstand voltage of 650V and 240 mω. When applied to fast charging charger, it depends on ultra-low switching loss, and can still achieve high efficiency of > 93% at switching frequency of > 300kHz. It is not only energy-saving and environment-friendly, but also safer to use.
According to the 65W gallium nitride fast charge PCBA developed by superphorm company, its volume is very small. It is reported that this scheme has been mass-produced and shipped to customers, and has been adopted by Romance 65W gallium nitride fast charging charger. With folding pins, the finished product power density of the charger can reach 1.07W/cm³, which is at the leading level in the industry.
The detailed specifications of TP65H300G4LSG of Transphorm.
Transphorm is committed to designing, manufacturing and selling high-performance and high-reliability gallium nitride (GaN) semiconductor power devices for high-voltage power conversion applications. Transphorm holds a huge intellectual property portfolio, with more than 1,000 patents approved and awaiting approval in the world. transphorm is one of the first IDM enterprises in the industry to produce GaN FET certified by JEDEC and AEC-Q101.
Thanks to the vertically integrated business model, Transphorm can innovate in every stage of product and technology development, including design, manufacturing, device and application support.
Transphorm: let power electronics applications exceed the silicon limit.