Innoscience Releases a 30W Gallium Nitride Fast Charging Solution with Built-In INN650DA04
Not long ago, Apple and Samsung successively advocated the proposal of “reducing the burden on the earth” and announced that they would cancel the standard charger when purchasing mobile phones. This move really stimulated the third-party charger market. To this end, InnoSec has introduced 20W GaN fast charging and 30W GaN fast charging solutions, which can simultaneously meet the fast charging needs of mobile phone users such as Apple, Samsung, Xiaomi, Huawei, and OPPO.
This 30W GaN fast charge uses the second-generation INN650DA04 of the InnoGaN series, which has the characteristics of high-frequency efficiency, extremely low loss, and fast active heat dissipation. At the same time, it is packaged with DFN5*6 to achieve small size, high efficiency, and quickly become Market focus.
Based on the superiority of InoGaN technology, InnoSec’s 30W fast charging solution has doubled the power density compared with the traditional solution, the maximum efficiency can be increased by about 9%, the loss is smaller, the volume is smaller, and the cost performance is higher. It is bound to become a consumer The best choice for 30W fast charging.
The introduction of InoGaN 30W solution:
Input voltage range: 90—264 Vac
Output voltage range: 5-20 V
Power density: 22.5 W/in³
Maximum efficiency: 93%
Solution chip: INN650DA04 (GaN) + SC3021 (direct drive GaN IC) + SC3503 (synchronous rectification), HUSB339 (protocol)
The characteristics of InoGaN 30W solution performance :
1.The power density is doubled and the speed is faster
Compared with the traditional Si MOS solution, the power density of this 30W GaN solution is doubled. The simple structure makes it smaller than the traditional 20W solution, and the production process is simpler and more convenient. It is a tens of millions of 30W fast charging market. The required large-volume supply and high-efficiency production capacity provide a strong guarantee.
2.The efficiency is increased by 9%, and the stability is stronger
Based on Innosecco’s high-frequency and high-efficiency characteristics, the efficiency of the 30W GaN solution has been a qualitative leap. Compared with the mainstream Si MOS solution on the market, the efficiency can be increased by 9% under 90V input conditions. Not only achieves the energy-saving effect, but also reduces losses, greatly reduces the temperature rise of the housing, and has higher safety and stability.
3.Minimal design, higher cost performance
The high frequency characteristics of this 30W GaN fast charge are significantly better than Si MOS in terms of achieving high efficiency and small size. Because the efficiency of GaN is high enough, it can save the heat design, so as to realize the compact adapter design with small size and high efficiency. Through better control of the internal temperature rise, and the stronger high temperature resistance of GaN compared to Si, it is matched with a simple design and The layout greatly reduces the system cost and processing cost.
Thanks to the world’s first 8-inch enhanced silicon-based gallium nitride power device mass production line and advanced R&D quality control analysis capabilities, the overall performance, cost, and production capacity of InnoSec InnoGaN series are well controlled. This time, the use of GaN technology to focus on creating a high-frequency, high-efficiency, cost-effective 30w fast charging solution may become another innovative move in the fast charging market, continuously meeting users’ needs for charger versatility, portability, and high efficiency. Leading the rapid development of gallium nitride fast charging market.